DMT5015LFDF

Note : Your request will be directed to Diodes Incorporated.

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The DMT5015LFDF from Diodes Incorporated is a MOSFET with Continous Drain Current 9.1 A, Drain Source Resistance 10.5 to 23 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 0.5 to 2 V. Tags: Surface Mount. More details for DMT5015LFDF can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT5015LFDF
  • Manufacturer
    Diodes Incorporated
  • Description
    50 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.1 A
  • Drain Source Resistance
    10.5 to 23 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    0.5 to 2 V
  • Gate Charge
    6.1 to 14 nC
  • Power Dissipation
    1.97 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Load Switch, Adaptor Switch, Notebook PC

Technical Documents