DMTH10H030LK3

Note : Your request will be directed to Diodes Incorporated.

DMTH10H030LK3 Image

The DMTH10H030LK3 from Diodes Incorporated is a MOSFET with Continous Drain Current 28 A, Drain Source Resistance 30 to 45 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 3.5 V. Tags: Surface Mount. More details for DMTH10H030LK3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMTH10H030LK3
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 33.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    28 A
  • Drain Source Resistance
    30 to 45 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 3.5 V
  • Gate Charge
    33.3 nC
  • Power Dissipation
    3.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents