DMTH4M70SPGWQ

Note : Your request will be directed to Diodes Incorporated.

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The DMTH4M70SPGWQ from Diodes Incorporated is an Automotive Qualified N-Channel Enhancement Mode MOSFET. This power MOSFET has a gate-source voltage of 2 V and a gate threshold voltage of over 2 V. It has a drain-source breakdown voltage of more than 40 V and a drain-source on-resistance of 0.54 mΩ. This MOSFET has a continuous drain current of 460 A and a total power dissipation of up to 5.6 W. It provides a high conversion efficiency and has a low drain-source on-resistance that minimizes power losses. This AEC-Q101 qualified MOSFET consists of a wettable flank to improve optical inspection and offers a 100% unclamped inductive switching (UIS) test that ensures high reliability and robustness. 

 This RoHS-compliant MOSFET is available in a surface-mount package that measures 7.90 x 7.80 mm and is ideal for engine management systems, body control electronics, and DC-DC converter applications.


Product Specifications

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Product Details

  • Part Number
    DMTH4M70SPGWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    40 V Automotive Qualified N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    460 A
  • Drain Source Resistance
    0.54 to 0.7 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    117.1 nC
  • Power Dissipation
    5.6 to 428 W
  • Temperature operating range
    -55 to 175 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI8080-5
  • Applications
    Engine Management Systems, Body Control Electronics, DC-DC Converters

Technical Documents