DMTH6009SPS

Note : Your request will be directed to Diodes Incorporated.

The DMTH6009SPS from Diodes Incorporated is a MOSFET with Continous Drain Current 12.9 to 89.5 A, Drain Source Resistance 7.6 to 13.5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.8 V. Tags: Surface Mount. More details for DMTH6009SPS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH6009SPS
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12.9 to 89.5 A
  • Drain Source Resistance
    7.6 to 13.5 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.8 V
  • Gate Charge
    13.9 to 29.3 nC
  • Power Dissipation
    2.8 to 136 W
  • Temperature operating range
    -55 to 175 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    High Frequency Switching, Synchronized Rectification, DC-DC Converters

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