DMWS120H100SM4

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The DMWS120H100SM4 from Diodes Incorporated is an N-Channel Enhancement Mode SiC MOSFET that has been designed to minimize the on-state resistance while maintaining superior switching performance. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of 80 milli-ohms. This MOSFET has a continuous drain current of up to 37.2 A and a power dissipation of less than 208 W. It has a low input capacitance and a high drain-source breakdown voltage rating that is suitable for power applications. This RoHS-compliant MOSFET is available in a through-hole package that measures 15.75 x 40.61 mm and is ideal for EV battery chargers, solar inverters, DC-DC converters, industrial motor drives, data centers, and telecom power supply applications.

Product Specifications

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Product Details

  • Part Number
    DMWS120H100SM4
  • Manufacturer
    Diodes Incorporated
  • Description
    1200 V N-Channel Enhancement Mode SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    15.75 x 40.61 mm
  • Number of Channels
    Single
  • Continous Drain Current
    37.2 A
  • Drain Source Resistance
    80 milli-ohms
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -8 to 19 V
  • Gate Source Threshold Voltage
    2.5 V
  • Gate Charge
    52 nC
  • Power Dissipation
    208 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO247-4
  • Applications
    Data center and telecom power supplies, Industrial motor drives, DC-DC converters, Solar inverters, EV battery chargers

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