2N7000

Note : Your request will be directed to Diotec Semiconductor.

The 2N7000 from Diotec Semiconductor is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 5000 to 6000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -40 to 40 V, Gate Source Threshold Voltage 0.8 to 3 V. Tags: Through Hole. More details for 2N7000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N7000
  • Manufacturer
    Diotec Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    5000 to 6000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -40 to 40 V
  • Gate Source Threshold Voltage
    0.8 to 3 V
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Applications
    Signal processing, Logic Level Converter, Drivers Commercial grade

Technical Documents

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