DI003N03SQ2

Note : Your request will be directed to Diotec Semiconductor.

The DI003N03SQ2 from Diotec Semiconductor is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 90 to 150 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -18 to 18 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for DI003N03SQ2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DI003N03SQ2
  • Manufacturer
    Diotec Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    90 to 150 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -18 to 18 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    4.5 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    DC/DC converter, Power supplies, DC drives, Synchronous rectifiers, Commercial/Industrial grade

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