DI006P02PW

Note : Your request will be directed to Diotec Semiconductor.

The DI006P02PW from Diotec Semiconductor is a MOSFET with Continous Drain Current -6 A, Drain Source Resistance 25 to 35 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for DI006P02PW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DI006P02PW
  • Manufacturer
    Diotec Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -6 A
  • Drain Source Resistance
    25 to 35 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    13 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN
  • Applications
    DC/DC converter, Power supplies, DC drives, Synchronous rectifiers, Commercial/Industrial grade

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