DI045N10PQ-Q

Note : Your request will be directed to Diotec Semiconductor.

The DI045N10PQ-Q from Diotec Semiconductor is a MOSFET with Continous Drain Current 45 A, Drain Source Resistance 5.5 to 7.4 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.3 V. Tags: Surface Mount. More details for DI045N10PQ-Q can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DI045N10PQ-Q
  • Manufacturer
    Diotec Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    45 A
  • Drain Source Resistance
    5.5 to 7.4 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.3 V
  • Gate Charge
    76 nC
  • Power Dissipation
    110 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN
  • Applications
    DC/DC converter, Power supplies, DC drives, Synchronous rectifiers, Commercial/Industrial grade

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.