DI110N06D1-AQ

Note : Your request will be directed to Diotec Semiconductor.

The DI110N06D1-AQ from Diotec Semiconductor is a MOSFET with Continous Drain Current 110 A, Drain Source Resistance 2.5 to 4.5 milliohm, Drain Source Breakdown Voltage 65 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for DI110N06D1-AQ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DI110N06D1-AQ
  • Manufacturer
    Diotec Semiconductor
  • Description
    65 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    110 A
  • Drain Source Resistance
    2.5 to 4.5 milliohm
  • Drain Source Breakdown Voltage
    65 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    75 nC
  • Power Dissipation
    71 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    DC/DC converter, Power supplies, DC drives, Synchronous rectifiers, Commercial/Industrial grade

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.