DIF120SIC053-AQ

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DIF120SIC053-AQ Image

The DIF120SIC053-AQ from Diotec Semiconductor is an Automotive-Qualified Silicon Carbide (SiC) MOSFET that is ideal for solar inverters, battery chargers, power supplies, commercial/industrial-grade, and electric vehicle (EV) charging applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.6 V, and a drain-source on-resistance of 40 milli-ohms. This MOSFET has a continuous drain current of up to 65 A and a power dissipation of less than 278 W. It has a Kelvin source pin that supports fast switching and reduced noise levels at the gate terminal. This AEC-Q101-qualified MOSFET has a large clearance and creepage distance and should be subjected to a soldering temperature of 260°C for up to 10 seconds. It is available in a through-hole package that measures 15.94 x 5.00 mm.

Product Specifications

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Product Details

  • Part Number
    DIF120SIC053-AQ
  • Manufacturer
    Diotec Semiconductor
  • Description
    1200 V Automotive-Qualified Silicon Carbide MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    15.94 x 5.00 mm
  • Number of Channels
    Single
  • Continous Drain Current
    65 A
  • Drain Source Resistance
    40 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -8 to 22 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    121 nC
  • Power Dissipation
    278 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    EV Charging Stations, Solar Inverter, Battery Charger and Power Supplies

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