MMFTP2319

Note : Your request will be directed to Diotec Semiconductor.

The MMFTP2319 from Diotec Semiconductor is a MOSFET with Continous Drain Current -4.2 A, Drain Source Resistance 80 to 120 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for MMFTP2319 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MMFTP2319
  • Manufacturer
    Diotec Semiconductor
  • Description
    -40 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.2 A
  • Drain Source Resistance
    80 to 120 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    20 nC
  • Power Dissipation
    0.75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Signal processing, Battery management Drivers, Logic Level Converter, Commercial / Industrial grade

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.