MMFTP5618-Q

Note : Your request will be directed to Diotec Semiconductor.

The MMFTP5618-Q from Diotec Semiconductor is a MOSFET with Continous Drain Current -1.25 A, Drain Source Resistance 170 to 230 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for MMFTP5618-Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMFTP5618-Q
  • Manufacturer
    Diotec Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.25 A
  • Drain Source Resistance
    170 to 230 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    7 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Signal processing, Battery management Drivers, Logic Level Converter, Commercial / Industrial grade

Technical Documents