FTK2116NP

Note : Your request will be directed to First Silicon.

The FTK2116NP from First Silicon is a MOSFET with Continous Drain Current 3.8 A, Drain Source Resistance 30 to 70 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for FTK2116NP can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2116NP
  • Manufacturer
    First Silicon
  • Description
    20 V, 3.8 A, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.8 A
  • Drain Source Resistance
    30 to 70 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    5.8 to 10 nC
  • Switching Speed
    2.9 to 38 ns
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Applications
    Notebook, Load Switch, Networking, Hand-held Instruments
  • Note
    Input Capacitance :- 600 pF