FTK2308

Note : Your request will be directed to First Silicon.

The FTK2308 from First Silicon is a MOSFET with Continous Drain Current 1.8 to 2.6 A, Drain Source Resistance 82 to 200 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for FTK2308 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK2308
  • Manufacturer
    First Silicon
  • Description
    60 V, 1.8 to 2.6 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.8 to 2.6 A
  • Drain Source Resistance
    82 to 200 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    12 nC
  • Switching Speed
    3 to 29 ns
  • Power Dissipation
    0.45 to 0.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Power Management in Note book, Portable Equipment, Battery Powered System, Load Switch, DSC
  • Note
    Input Capacitance :- 350 pF