FTK8970P

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The FTK8970P from First Silicon is a MOSFET with Continous Drain Current 126 to 200 A, Drain Source Resistance 2 to 2.6 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3.5 V. Tags: Through Hole. More details for FTK8970P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FTK8970P
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 126 to 200 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    126 to 200 A
  • Drain Source Resistance
    2 to 2.6 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3.5 V
  • Gate Charge
    247 to 360 nC
  • Switching Speed
    71 to 580 ns
  • Power Dissipation
    208 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Networking, Load Switch, LED applications
  • Note
    Input Capacitance :- 23000 pF