IRF540I

Note : Your request will be directed to First Silicon.

The IRF540I from First Silicon is a MOSFET with Continous Drain Current 27 A, Drain Source Resistance 34 to 44 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRF540I can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF540I
  • Manufacturer
    First Silicon
  • Description
    -20 to 20 V, 27 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    27 A
  • Drain Source Resistance
    34 to 44 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Switching Speed
    9.4 to 39 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Through Hole
  • Package
    TO-251
  • Applications
    Power switching application, Load switching in high circuit application, DC/DC converters
  • Note
    Input Capacitance :- 800 pF