G2R1000MT33J Image

G2R1000MT33J

Note : Your request will be directed to GeneSiC Semiconductor.

The G2R1000MT33J from GeneSiC Semiconductor is a MOSFET with Continous Drain Current 2 to 5 A, Drain Source Resistance 1000 to 2505 milliohm, Drain Source Breakdown Voltage 3300 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 1.8 to 3.5 V. Tags: Surface Mount. More details for G2R1000MT33J can be seen below.

Product Specifications

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Product Details

  • Part Number
    G2R1000MT33J
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    3300 V, 2 to 5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 to 5 A
  • Drain Source Resistance
    1000 to 2505 milliohm
  • Drain Source Breakdown Voltage
    3300 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    1.8 to 3.5 V
  • Gate Charge
    18 nC
  • Power Dissipation
    74 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-263-7
  • Applications
    Auxiliary Power supply, solar Inverters(string and central), Infrastruscture Charging, Industrial moter(AC servo), General Purpose inverters, Pulse power, Piezo drivers, Ion Bean Generatores

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