BSC0910NDI

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BSC0910NDI Image

The BSC0910NDI from Infineon Technologies is a MOSFET with Continous Drain Current 11 to 40 A, Drain Source Resistance 0.9 to 5.6 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for BSC0910NDI can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSC0910NDI
  • Manufacturer
    Infineon Technologies
  • Description
    25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    11 to 40 A
  • Drain Source Resistance
    0.9 to 5.6 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    5 to 30.6 nC
  • Power Dissipation
    1 to 2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TISON-8
  • Applications
    Onboard charger, Notebook, Mainboard, DC-DC, VRD/VRM, Motor control, LED

Technical Documents