The BUP06CN015E-01 from Infineon Technologies is an Automotive-Qualified N-Channel Power MOSFET that is ideal for automotive applications. It has a drain-source breakdown voltage of over 60 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of 9.5 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 106 A and a power dissipation of less than 390 W. It also offers radiation tolerance against single-event effects (SEE) and has a total ionization dose (TID) of 30 kRad. This RoHS-compliant power MOSFET is available in a through-hole package that measures 15.7 x 4.3 mm.