The BUP06CN035L-01 from Infineon Technologies is a Radiation N-channel Power MOSFET that has been designed for LEO satellite missions and constellations. It has a drain-source breakdown voltage of over 60 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of 27 milli-ohms. This AEC-Q101-qualified MOSFET is a single event effect (SEE) tolerant device with an approved total ionization dose (TID) tolerance of up to 30 kRad and a linear energy transfer (LET) tolerance of 46 MeV·cm²/mg. It is available in a surface-mount package that measures 9.8 x 14.61 x 4.3 mm and is suitable for DC-DC converters, power distribution units, power conditioning units, and all power-related applications.