The BUP15CN027E-01 from Infineon Technologies is a Radiation-Tolerant N-Channel Power MOSFET that is ideal for automotive applications. It has a drain-source breakdown voltage of less than 150 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of 16.7 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 98 A and a power dissipation of less than 390 W. It is equipped to withstand single-event effects (SEE) and is tolerant to a total ionization dose (TID)of up to 30 kRad ensures robust performance under intense radiation conditions. This RoHS-compliant power MOSFET is available in a through-hole package that measures 41.40 x 16.13 x 5.21 mm.