IAUCN08S7N013

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The IAUCN08S7N013 from Infineon Technologies is an Automotive Qualified Power MOSFET ideal for general automotive applications. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of 2.8 V, and a drain-source on-resistance of less than 1.30 milli-ohms. This MOSFET has a continuous drain current of up to 274 A and a power dissipation of less than 219 W. It features enhanced electrical testing and a robust design. This power MOSFET device offers extended qualification beyond the AEC-Q101 standard. It is 100% avalanche-tested, ensuring better performance and durability. This RoHS-compliant MOSFET is available in a surface-mount package that measures 5.15 x 5.48 mm.

Product Specifications

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Product Details

  • Part Number
    IAUCN08S7N013
  • Manufacturer
    Infineon Technologies
  • Description
    80 V Automotive Qualified Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5.15 x 5.48 mm
  • Number of Channels
    Single
  • Continous Drain Current
    274 A
  • Drain Source Resistance
    1.3 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.8 V
  • Gate Charge
    89 nC
  • Power Dissipation
    219 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-53
  • Applications
    General automotive applications

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