IMBG120R090M1H

Note : Your request will be directed to Infineon Technologies.

IMBG120R090M1H Image

The IMBG120R090M1H from Infineon Technologies is a MOSFET with Continous Drain Current 26 A, Drain Source Resistance 90 to 170 Milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -7 to 23 V, Gate Source Threshold Voltage 3.5 to 5.7 V. Tags: Surface Mount. More details for IMBG120R090M1H can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IMBG120R090M1H
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    26 A
  • Drain Source Resistance
    90 to 170 Milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -7 to 23 V
  • Gate Source Threshold Voltage
    3.5 to 5.7 V
  • Gate Charge
    23 nC
  • Power Dissipation
    136 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO263-7
  • Applications
    Drives, Infrastructure – Charger, Energy generation - Solar string inverter and solar optimizer, Industrial power supplies - Industrial UPS

Technical Documents