The IMZ120R030M1H from Infineon Technologies is a SiC Trench Power MOSFET that is ideal for solar string inverters, solar optimizers, industrial SMPS, industrial UPS, and charging applications. It has a drain-source voltage of up to 1200 V, gate threshold voltage of 4.5 V, and a drain-source on-resistance of less than 42 milli-ohms. This JEDEC-qualified MOSFET has a continuous drain current of up to 56 A and a power dissipation of less than 227 W. It is based on CoolSiC technology that reduces the effort of cooling and offers a simplified gate drive operation. This SiC MOSFET provides very low switching losses with a temperature independent turn-off switching loss and allows the user to fully control the dV/dt transient.
The IMZ120R030M1H integrates a robust body diode that ensures hard commutation and a sense pin to optimize switching performance and improve efficiency. This RoHS-compliant MOSFET is available in a through-hole package that measures 15.70 x 40.52 mm.