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IMZ120R030M1H Image

The IMZ120R030M1H from Infineon Technologies is a SiC Trench Power MOSFET that is ideal for solar string inverters, solar optimizers, industrial SMPS, industrial UPS, and charging applications. It has a drain-source voltage of up to 1200 V, gate threshold voltage of 4.5 V, and a drain-source on-resistance of less than 42 milli-ohms. This JEDEC-qualified MOSFET has a continuous drain current of up to 56 A and a power dissipation of less than 227 W. It is based on CoolSiC technology that reduces the effort of cooling and offers a simplified gate drive operation. This SiC MOSFET provides very low switching losses with a temperature independent turn-off switching loss and allows the user to fully control the dV/dt transient.

The IMZ120R030M1H integrates a robust body diode that ensures hard commutation and a sense pin to optimize switching performance and improve efficiency. This RoHS-compliant MOSFET is available in a through-hole package that measures 15.70 x 40.52 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V SiC Trench Power MOSFET for Power Supply Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Dimensions
    15.70 x 40.52 mm
  • Number of Channels
  • Continous Drain Current
    56 A
  • Drain Source Resistance
    42 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -7 to 23 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    63 nC
  • Power Dissipation
    227 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Energy generation o Solar string inverter and solar optimizer, Industrial power supplies o Industrial UPS o Industrial SMPS, Infrastructure – Charge o Charger

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