IMZA65R039M1H

Note : Your request will be directed to Infineon Technologies.

IMZA65R039M1H Image

The IMZA65R039M1H from Infineon Technologies is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 39 to 55 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -5 to 23 V, Gate Source Threshold Voltage 3.5 to 5.7 V. Tags: Through Hole. More details for IMZA65R039M1H can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IMZA65R039M1H
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    39 to 55 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -5 to 23 V
  • Gate Source Threshold Voltage
    3.5 to 5.7 V
  • Gate Charge
    41 nC
  • Power Dissipation
    176 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO247-4
  • Applications
    SMPS, UPS(uninterruptable power supplies), Solar PV inverters, Ev charging infrastructure, Energy storage and battery formation, Class D amplifiers

Technical Documents