The IPB033N10N5LFATMA1 from Infineon Technologies is a Linear N-Channel Power MOSFET that is ideal for hot-swap and e-fuse applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 4.1 V, and a drain-source on-resistance of less than 3.30 milli-ohms. This JEDEC-qualified MOSFET has a continuous drain current of up to 159 A and a power dissipation of less than 179 W. It is designed based on Infineon’s OptiMOS technology and features very low drain-source on-resistance, high efficiency, and high power density. This RoHS-compliant MOSFET benefits from a wide safe operation area (SOA) and has undergone rigorous tests to ensure that it can handle avalanche conditions. It is available in a surface-mount package that measures 10.31 x 9.45 x 4.57 mm.