IPB160N04S3-H2

Note : Your request will be directed to Infineon Technologies.

IPB160N04S3-H2 Image

The IPB160N04S3-H2 from Infineon Technologies is a MOSFET with Continous Drain Current 157 to 160 A, Drain Source Resistance 1.6 to 2.1 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 4 V. Tags: Through Hole. More details for IPB160N04S3-H2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPB160N04S3-H2
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    157 to 160 A
  • Drain Source Resistance
    1.6 to 2.1 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 4 V
  • Gate Charge
    110 to 145 nC
  • Power Dissipation
    214 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-7-3
  • Applications
    Automotive

Technical Documents