The IPB60R120P7 from Infineon Technologies is a MOSFET with Continous Drain Current 16 to 26 A, Drain Source Resistance 0.100 to 0.234 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPB60R120P7 can be seen below.