IPB65R310CFDA

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The IPB65R310CFDA from Infineon Technologies is a MOSFET with Continous Drain Current 7.2 to 11.4 A, Drain Source Resistance 0.28 to 0.725 Mohms, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPB65R310CFDA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB65R310CFDA
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.2 to 11.4 A
  • Drain Source Resistance
    0.28 to 0.725 Mohms
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    41 nC
  • Power Dissipation
    104.2 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263
  • Applications
    Automotive

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