IPD65R225C7

Note : Your request will be directed to Infineon Technologies.

IPD65R225C7 Image

The IPD65R225C7 from Infineon Technologies is a MOSFET with Continous Drain Current 7 to 11 A, Drain Source Resistance 0.199 to 0.478 Mohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPD65R225C7 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPD65R225C7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 to 11 A
  • Drain Source Resistance
    0.199 to 0.478 Mohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    20 nC
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UP Sand Solar.

Technical Documents