IPTG014N10NM5 Image

IPTG014N10NM5

Note : Your request will be directed to Infineon Technologies.

The IPTG014N10NM5 from Infineon Technologies is a MOSFET with Continous Drain Current 37 to 366 A, Drain Source Resistance 1.3 to 2.0 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.2 to 3.8 V. Tags: Surface Mount. More details for IPTG014N10NM5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPTG014N10NM5
  • Manufacturer
    Infineon Technologies
  • Description
    100 V N-Channel Enhancement MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Dimensions
    10.10 x 8.75 x 2.40 mm
  • Continous Drain Current
    37 to 366 A
  • Drain Source Resistance
    1.3 to 2.0 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 to 3.8 V
  • Gate Charge
    169 to 211 nC
  • Power Dissipation
    3.8 to 375 W
  • Temperature operating range
    -55 to 175 ºC
  • Industry
    Power
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HSOG-8-1
  • Applications
    Industrial

Technical Documents

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