IRF7351PbF

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IRF7351PbF Image

The IRF7351PbF from Infineon Technologies is a MOSFET with Continous Drain Current 6.4 to 8 A, Drain Source Resistance 13.7 to 17.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IRF7351PbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF7351PbF
  • Manufacturer
    Infineon Technologies
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.4 to 8 A
  • Drain Source Resistance
    13.7 to 17.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    24 to 36 nC
  • Power Dissipation
    1.28 to 2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO8
  • Applications
    Synchronous Rectifier MOSFET for Isolated DC-DC Converters, ow Power Motor Drive Systems

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