IRHM7360SE

Note : Your request will be directed to Infineon Technologies.

IRHM7360SE Image

The IRHM7360SE from Infineon Technologies is a MOSFET with Continous Drain Current 22 A, Drain Source Resistance 210 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for IRHM7360SE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRHM7360SE
  • Manufacturer
    Infineon Technologies
  • Description
    400 V, 185 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    22 A
  • Drain Source Resistance
    210 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    185 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    TO-254AA

Technical Documents