ITD50N04S4L-07

Note : Your request will be directed to Infineon Technologies.

ITD50N04S4L-07 Image

The ITD50N04S4L-07 from Infineon Technologies is a MOSFET with Continous Drain Current 42 to 50 A, Drain Source Resistance 5.9 to 10.6 Mohms, Drain Source Breakdown Voltage 40 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Through Hole. More details for ITD50N04S4L-07 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ITD50N04S4L-07
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    42 to 50 A
  • Drain Source Resistance
    5.9 to 10.6 Mohms
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    25 to 33 nC
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-5-311
  • Applications
    Automotive

Technical Documents