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The IXFB40N110P from Littelfuse is a MOSFET with Continous Drain Current 40 A, Drain Source Resistance 260 milliohm, Drain Source Breakdown Voltage 1100 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.5 to 6.5 V. Tags: Through Hole. More details for IXFB40N110P can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    -30 to 30 V, 310 nC, N-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    260 milliohm
  • Drain Source Breakdown Voltage
    1100 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.5 to 6.5 V
  • Gate Charge
    310 nC
  • Power Dissipation
    1250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-264 PLUS
  • Applications
    High Voltage Switch-Mode and Resonant-Mode Power Supplies, High Voltage Pulse Power Applications, High Voltage Discharge Circuits in Laser Pulsers Spark Igniters, RF Generators, High Voltage DC-DC Coverters, High Voltage DC-AC Inverters

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