IXFH5N100P

Note : Your request will be directed to Littelfuse.

The IXFH5N100P from Littelfuse is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 2800 milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 6 V. Tags: Through Hole. More details for IXFH5N100P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXFH5N100P
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 33.4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    2800 milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 6 V
  • Gate Charge
    33.4 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, Uninterrupted power supplies, AC motor control, High speed power switching applications

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