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IXTH50P10

Note : Your request will be directed to Littelfuse.

The IXTH50P10 from Littelfuse is a MOSFET with Continous Drain Current -50 A, Drain Source Resistance 55 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -5 to -3 V. Tags: Through Hole. More details for IXTH50P10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTH50P10
  • Manufacturer
    Littelfuse
  • Description
    -100 V, 140 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -50 A
  • Drain Source Resistance
    55 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -5 to -3 V
  • Gate Charge
    140 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    High-Side Switches, Push Pull Amplifiers, DC Choppers, Automatic Test Equipment, Current Regulators

Technical Documents

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