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IXTN170P10P

Note : Your request will be directed to Littelfuse.

The IXTN170P10P from Littelfuse is a MOSFET with Continous Drain Current -170 A, Drain Source Resistance 14 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Chassis Mount. More details for IXTN170P10P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTN170P10P
  • Manufacturer
    Littelfuse
  • Description
    -100 V, 240 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -170 A
  • Drain Source Resistance
    14 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    240 nC
  • Power Dissipation
    890 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Chassis Mount
  • Package
    miniBLOC, SOT-227
  • Applications
    High-Side Switches, Push Pull Amplifiers, DC Choppers, Automatic Test Equipment, Current Regulators

Technical Documents

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