IXTY1R6N50D2

Note : Your request will be directed to Littelfuse.

The IXTY1R6N50D2 from Littelfuse is a MOSFET with Continous Drain Current 1.6 A, Drain Source Resistance 2.3 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4.5 to -2.5 V. Tags: Surface Mount. More details for IXTY1R6N50D2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTY1R6N50D2
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 23.7 nC, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.6 A
  • Drain Source Resistance
    2.3 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4.5 to -2.5 V
  • Gate Charge
    23.7 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Audio Amplifiers, Start-up Circuits, Protection Circuits, Ramp Generators, Current Regulators, Active Loads

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