SICW028N120A4-BP

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SICW028N120A4-BP Image

The SICW028N120A4 from Micro Commerical Components is an N-Channel SiC MOSFET that has been designed to offer high blocking voltage while maintaining low on-resistance in a rugged package. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2 V, and a drain-source on-resistance of 28 milli-ohms. This MOSFET has a continuous drain current of up to 80 A and a pulsed drain current of less than 320 A. It has a power dissipation of 375 W. This MOSFET is manufacturing using SiC technology and offers avalanche ruggedness over the operating temperature range. It meets the UL 94 V-0 flammability rating requirements for high reliability. This SiC MOSFET is available in a through-hole package that measures 15.75 x 4.80 mm and is ideal for motor drives, battery chargers, solar inverters, switch-mode power supplies, and high voltage DC-DC conversion applications.

Product Specifications

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Product Details

  • Part Number
    SICW028N120A4-BP
  • Manufacturer
    Micro Commercial Components
  • Description
    1200 V Avalanche-Rugged N-Channel SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    15.75 x 4.80 mm
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    28 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -5 to 22 V
  • Gate Source Threshold Voltage
    2 V
  • Gate Charge
    168 nC
  • Power Dissipation
    375 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4
  • Applications
    Solar Inverters, Switch Mode Power Supplies, High Voltage DC/DC Converters, Battery Chargers, Motor Drives

Technical Documents