APT41M80B2 Image


Note : Your request will be directed to Microchip Technology.

The APT41M80B2 from Microchip Technology is a MOSFET with Continous Drain Current 43 A, Drain Source Resistance 210 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for APT41M80B2 can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Microchip Technology
  • Description
    800 V, N-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    43 A
  • Drain Source Resistance
    210 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    260 nC
  • Power Dissipation
    1040 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    PFC and other boost converter, Buck converter, Two switch forward (asymmetrical bridge), Single switch forward, Flyback, Inverters

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