APT56M50B2

Note : Your request will be directed to Microchip Technology.

APT56M50B2 Image

The APT56M50B2 from Microchip Technology is a MOSFET with Continous Drain Current 56 A, Drain Source Resistance 100 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for APT56M50B2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    APT56M50B2
  • Manufacturer
    Microchip Technology
  • Description
    500 V N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    56 A
  • Drain Source Resistance
    100 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    220 nC
  • Power Dissipation
    780 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    T-MAX
  • Applications
    PFC and other boost converter, Buck converter, Two switch forward (asymmetrical bridge), Single switch forward, Flyback, Inverters

Technical Documents