APT8M100B Image

APT8M100B

Note : Your request will be directed to Microchip Technology.

The APT8M100B from Microchip Technology is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 1800 milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 5 V. Tags: Through Hole. More details for APT8M100B can be seen below.

Product Specifications

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Product Details

  • Part Number
    APT8M100B
  • Manufacturer
    Microchip Technology
  • Description
    1000 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    1800 milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 5 V
  • Gate Charge
    60 nC
  • Power Dissipation
    290 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    PFC and other boost converter, Buck converter, Two switch forward (asymmetrical bridge), Single switch forward, Flyback, Inverters

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