DN2540N3-G P002 Image

DN2540N3-G P002

Note : Your request will be directed to Microchip Technology.

The DN2540N3-G P002 from Microchip Technology is a MOSFET with Continous Drain Current 0.12 A, Drain Source Resistance 17000 to 25000 milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -20 to 20 V, Power Dissipation 1 W. Tags: Through Hole, Surface Mount. More details for DN2540N3-G P002 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DN2540N3-G P002
  • Manufacturer
    Microchip Technology
  • Description
    400 V, N-Channel Depletion Mode MOSFET


  • Types of MOSFET
    N-Channel Depletion Mode
  • Technology
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    0.12 A
  • Drain Source Resistance
    17000 to 25000 milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -20 to 20 V
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole, Surface Mount
  • Package
  • Applications
    Normally-on switches, Solid state relays, Converters, Linear amplifiers, Constant current sources, Power supply circuits, Telecom

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