TP0610T Image


Note : Your request will be directed to Microchip Technology.

The TP0610T from Microchip Technology is a MOSFET with Continous Drain Current -0.12 A, Drain Source Resistance 10000 to 25000 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.4 to -1 V. Tags: Surface Mount. More details for TP0610T can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Microchip Technology
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    -0.12 A
  • Drain Source Resistance
    10000 to 25000 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.4 to -1 V
  • Power Dissipation
    0.36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Logic-Level Interfaces (Ideal for TTL and CMOS), Solid-State Relays, Battery-Operated Systems, Photovoltaic Drives, Analog Switches, General Purpose Line Drivers, Telecommunication Switches

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