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TP2535

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The TP2535 from Microchip Technology is a MOSFET with Continous Drain Current -0.086 A, Drain Source Resistance 19000 to 30000 milliohm, Drain Source Breakdown Voltage -350 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.4 to -1 V. Tags: Through Hole. More details for TP2535 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TP2535
  • Manufacturer
    Microchip Technology
  • Description
    -350 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.086 A
  • Drain Source Resistance
    19000 to 30000 milliohm
  • Drain Source Breakdown Voltage
    -350 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.4 to -1 V
  • Power Dissipation
    0.74 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Applications
    Logic-Level Interfaces (Ideal for TTL and CMOS), Solid-State Relays, Battery-Operated Systems, Photovoltaic Drives, Analog Switches, General Purpose Line Drivers, Telecommunication Switches

Technical Documents
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