TP2635 Image


Note : Your request will be directed to Microchip Technology.

The TP2635 from Microchip Technology is a MOSFET with Continous Drain Current -0.18 A, Drain Source Resistance 11000 to 15000 milliohm, Drain Source Breakdown Voltage -350 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -0.8 V. Tags: Through Hole. More details for TP2635 can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Microchip Technology
  • Description
    -350 V, P-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    -0.18 A
  • Drain Source Resistance
    11000 to 15000 milliohm
  • Drain Source Breakdown Voltage
    -350 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.8 V
  • Power Dissipation
    1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    Logic-Level Interfaces (Ideal for TTL and CMOS), Solid-State Relays, Battery-Operated Systems, Photovoltaic Drives, Analog Switches, General Purpose Line Drivers, Telecommunication Switches

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