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VP2110

Note : Your request will be directed to Microchip Technology.

The VP2110 from Microchip Technology is a MOSFET with Continous Drain Current -0.12 A, Drain Source Resistance 9000 to 15000 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3.5 to -1.5 V. Tags: Surface Mount. More details for VP2110 can be seen below.

Product Specifications

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Product Details

  • Part Number
    VP2110
  • Manufacturer
    Microchip Technology
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.12 A
  • Drain Source Resistance
    9000 to 15000 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3.5 to -1.5 V
  • Power Dissipation
    0.36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Motor controls, Converters, Amplifiers, Switches, Power supply circuits, Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

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