BUK763R1-60E

Note : Your request will be directed to Nexperia.

BUK763R1-60E Image

The BUK763R1-60E from Nexperia is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 2.34 to 6.7 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 4.5 V. Tags: Surface Mount. More details for BUK763R1-60E can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    BUK763R1-60E
  • Manufacturer
    Nexperia
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    2.34 to 6.7 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 4.5 V
  • Gate Charge
    114 nC
  • Power Dissipation
    293 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT404
  • Applications
    Automotive systems, Motors, lamps and solenoid control, Start-Stop micro-hybrid applications, Transmission control, Ultra high performance power switching

Technical Documents